Continuously tunable band gap in GaN/AlN (0001) superlattices via built-in electric field
نویسندگان
چکیده
X. Y. Cui,1 D. J. Carter,1,2 M. Fuchs,3 B. Delley,4 S. H. Wei,5 A. J. Freeman,6 and C. Stampfl1 1School of Physics, The University of Sydney, Sydney, New South Wales 2006, Australia 2Nanochemistry Research Institute, Curtin University of Technology, Perth, Western Australia 6845, Australia 3Fritz-Haber-Institut der Max-Planck-Gesellschaft, Faradayweg 4-6, 14195 Berlin, Germany 4Paul Scherrer Institut, WHGA/123, CH-5232 Villigen PSI, Switzerland 5National Renewable Energy Laboratory, 1617 Cole Boulevard, Golden, Colorado 80401, USA 6Department of Physics and Astronomy, Northwestern University, Evanston, Illinois 60208-3112, USA Received 24 September 2009; revised manuscript received 9 March 2010; published 1 April 2010
منابع مشابه
Theoretical study of nitride short period superlattices.
Discussion of band gap behavior based on first principles calculations of electronic band structures for various short period nitride superlattices is presented. Binary superlattices, as InN/GaN and GaN/AlN as well as superlattices containing alloys, as InGaN/GaN, GaN/AlGaN, and GaN/InAlN are considered. Taking into account different crystallographic directions of growth (polar, semipolar and n...
متن کاملQuantum state engineering with ultra-short-period (AlN)m/(GaN)n superlattices for narrowband deep-ultraviolet detection.
Ultra-short-period (AlN)m/(GaN)n superlattices with tunable well and barrier atomic layer numbers were grown by metal-organic vapour phase epitaxy, and employed to demonstrate narrowband deep ultraviolet photodetection. High-resolution transmission electron microscopy and X-ray reciprocal space mapping confirm that superlattices containing well-defined, coherently strained GaN and AlN layers as...
متن کاملStructural properties and spatial ordering in multilayered ZnMgTe/ZnSe type-II quantum dot structures
Related Articles Piezoelectric superlattices as multi-field internally resonating metamaterials AIP Advances 1, 041504 (2011) Effect of built-in electric field on the temperature dependence of transition energy for InP/GaAs type-II superlattices J. Appl. Phys. 110, 123523 (2011) Polarization property of deep-ultraviolet light emission from C-plane AlN/GaN short-period superlattices Appl. Phys. ...
متن کاملCubic inclusions in hexagonal AlN , GaN , and InN : Electronic states
Modern quasiparticle calculations based on hybrid functionals and the GW approximation or a transition-state approach are used to predict natural band discontinuities between wurtzite and zinc-blende polytypes of AlN, GaN, and InN by two alignment methods, a modified Tersoff method for the branch-point energy and the Shockley-Anderson model aligning electrostatic potentials. We find a type-I he...
متن کاملTight-binding study of the optical properties of GaN/AlN polar and nonpolar quantum wells
The electronic structure of wurtzite semiconductor superlattices (SLs) and quantum wells (QWs) is calculated by using the empirical tight-binding method. The basis used consists of four orbitals per atom (sp model), and the calculations include the spin-orbit coupling as well as the strain and electric polarization effects. We focus our study on GaN/AlN quantum wells grown both in polar (C) and...
متن کامل